Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals

作者：Anh Tuan Duong; Van Quang Nguyen; Duvjir, Ganbat; Van Thiet Duong; Kwon, Suyong; Song, Jae Yong; Lee, Jae Ki; Lee, Ji Eun; Park, SuDong; Min, Taewon; Lee, Jaekwang; Kim, Jungdae; Cho, Sunglae^*

来源：Nature Communications, 2016, 7(1): 13713.

DOI：10.1038/ncomms13713

• THERMOELECTRIC PROPERTIES
• ENHANCEMENT
• PBTE

Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a great influence on the thermoelectric properties of n-type SnSe single crystals. Indeed, we achieved the maximum ZT value of 2.2 along b axis at 733 K in the most highly doped n-type SnSe with a carrier density of -2.1 x 10(19) cm(-3) at 773 K.

• 出版日期2016-12-12