Direct growth of multilayer graphene by precipitation using W capping layer

作者:Yamada Jumpei*; Ueda Yuki; Maruyama Takahiro; Naritsuka Shigeya
来源:Japanese Journal of Applied Physics, 2016, 55(10): 100302.
DOI:10.7567/JJAP.55.100302

摘要

In this study, the direct growth of multilayer graphene from amorphous carbon on a sapphire (0001) substrate by precipitation using a nickel catalyst layer and a tungsten capping layer was examined. The findings revealed that a tungsten carbide layer was formed on top of the catalyst, and this suppressed the diffusion of carbon atoms upwards towards the surface. This caused the graphene layer to precipitate below the catalyst layer rather than above it. Under optimized growth conditions, Raman spectroscopy indicated that a high-quality graphene layer was formed with a low D/G peak intensity ratio of 0.10.

  • 出版日期2016-10