Dual-donor codoping approach to realize low-resistance n-type ZnS semiconductor

作者：Li, Dengfeng^*; Deng, Bo; Xue, Shuwen; Wang, Zhiguo; Gao, Fei

来源：Applied Physics Letters, 2011, 99(5): 052109.

DOI：10.1063/1.3624531

• VAPOR-PHASE EPITAXY
• DOPING ASYMMETRY
• SINGLE-CRYSTALS
• AG

Based on first-principles calculations, we explored a good candidate for achieving low-resistance and high carrier concentration of n-type ZnS by a dual-donor codoping method, where the ionization energy was effectively reduced. We found that the Sn(Zn)-F(S) pair has a shallow donor level of 17.2 meV, a small formation energy of 1.27 eV and a high binding energy of 1.28 eV. The density of states analysis showed that the Sn(Zn)-F(S) pair induces the downward shift of the conduction band minimum by about 0.15 eV, while the basis electronic structure does not change. Thus, the Sn(Zn)-F(S) pair is likely to be a best n-type dopant for ZnS.

• 出版日期2011-8-1
• 单位电子科技大学; 重庆邮电大学; 岭南师范学院