A simple model of DIGBL effect for polysilicon films and polysilicon thin-film transistors

作者：Wu Wei Jing^*; Yao Ruo He

来源：IEEE Electron Device Letters, 2008, 29(10): 1128-1131.

DOI：10.1109/LED.2008.2002318

• analytical model
• drain-induced grain barrier lowering (DIGBL) effect
• polysilicon films
• polysilicon thin-film transistors (poly-Si TFTs)

Based on charge conservation assumption, analytical models of the drain-induced grain barrier lowering effect are developed for polysilicon films by J-D Poisson's equation and for polysilicon thin-film transistors (poly-Si TFTs) by quasi-2-D Poisson's equation. It is shown that the voltage drop at the lower barrier side is less than that at the higher barrier side for both poly-Si films and poly-Si TFTs when applying a lateral bias across the grain-boundary barrier.

• 出版日期2008-10
• 单位华南理工大学