A V-Band CMOS Direct Injection-Locked Frequency Divider Using Forward Body Bias Technology

作者：Chen Y T^*; Li M W; Huang T H; Chuang Huey Ru

来源：IEEE Microwave and Wireless Components Letters, 2010, 20(7): 396-398.

DOI：10.1109/LMWC.2010.2049436

• CMOS
• forward body-biasing
• injection-locked frequency divider (ILFD)
• low supply voltage
• phase-locked loop (PLL)
• V-band

This letter presents a V-band direct injection-locked frequency divider (ILFD) using forward body bias technology. The divider is implemented in a 0.13 mu m CMOS process. The measurements show that the free-running frequency of the divider is 28.67 GHz, the total locking range is 16.2% at 58 GHz with 3.93 mW from a low supply voltage of 0.7 V, and the measured phase noise of the divider is -123.5 dBc/Hz at 500 KHz offset. The output power of the divider is higher than -9 dBm from 54 to 61 GHz, and a good figure of merit is achieved.

• 出版日期2010-7