Measurement of Integrated PA-to-LNA Isolation on Si CMOS Chip

作者：Minami Ryo^*; Hong JeeYoung; Okada Kenichi; Matsuzawa Akira

来源：IEICE - Transactions on Electronics, 2011, E94C(6): 1057-1060.

DOI：10.1587/transele.E94.C.1057

• CMOS
• power amplifier
• substrate coupling
• Tx leakage
• mutual coupling

This paper presents measurement of on-chip coupling between PA and LNA integrated on Si CMOS substrate, which is caused by substrate coupling, magnetic coupling, power-line coupling, etc. These components are decomposed by measurements using diced chips. The result reveals that the substrate coupling is the most dominant in CMOS chips and the total isolation becomes less than -50 dB with more than 0.4 mm PA-to-LNA distance.

• 出版日期2011-6