Mechanism of charge generation in p-type doped layer in the connection unit of tandem-type organic light-emitting devices

作者:Gao X D; Zhou J; Xie Z T; Ding B F; Qian Y C; Ding X M; Hou X Y*
来源:Applied Physics Letters, 2008, 93(8): 083304.
DOI:10.1063/1.2969293

摘要

A p-type doped organic layer combined with a hole-blocking layer has been experimentally demonstrated to serve as the charge generation unit in tandem-type organic light-emitting devices. The p-type layer functions as the source of both holes and electrons. Charge separation is explained by the tunneling model that the hole-blocking layer reduces the energy barrier for the electrons generated in the p-type layer to tunnel through into one light-emitting unit, while the holes generated in the p-type layer can transport to the other light-emitting unit easily under operation voltage.