An Investigation of Electrothermal Characteristics on Low-Temperature Polycrystalline-Silicon Thin-Film Transistors

作者：Tai Ya Li^*; Lee Jam Wem; Lien Chen Hsin

来源：IEEE Transactions on Device and Materials Reliability, 2010, 10(1): 96-99.

DOI：10.1109/TDMR.2009.2035105

• Electrostatic discharge (ESD)
• electrothermal effects
• grain boundaries
• low-temperature polycrystalline-silicon thin-film transistor (LTPS TFT)

In this paper, theoretical and experimental analyses have been performed to explore the electrothermal characteristics in low-temperature polycrystalline-silicon thin-film transistors (LTPS TFTs). A theoretical simulation reveals that electrothermal effects strongly influence the performance of LTPS TFTs, particularly under high-current conditions. Measurements show that, under extremely high currents, LTPS devices demonstrate an open-circuit behavior, while the behavior of devices based on single-crystalline silicon films using an SOI CMOS process results in a short-circuit model. In summary, both the simulation and measurements indicate that grain boundaries will degrade the electrothermal properties of the LTPS thin film and suppress reliability in TFT design.

• 出版日期2010-3
• 单位清华大学