A 3-state defect model for light-induced degradation in boron-doped float-zone silicon

作者：Sperber David^*; Herguth Axel; Hahn Giso

来源：Physica Status Solidi-Rapid Research Letters, 2017, 11(3): 1600408.

DOI：10.1002/pssr.201600408

• float-zone silicon
• light-induced degradation
• charge carrier lifetime
• defects
• boron
• doping

We report on a light-induced bulk defect activation and subsequent deactivation in boron doped float-zone silicon that can be described by a 3-state model. During treatment at elevated temperature and illumination, a sample first converts from an initial high lifetime state into a degraded low lifetime state and then shows a recovery reaction leading to a third high lifetime state that is then stable under degradation conditions. Furthermore, it is shown that reverse reactions into the initial state appear to be possible both from the degraded as well as the regenerated state. An injection dependent analysis of lifetime data yields a defect capture cross section ratio of similar to 20 suggesting a positively charged defect.

• 出版日期2017-3