Gapless insulator and a band gap scaling law in semihydrogenated graphene

作者：Wright A R^*; O'Brien T E; Beaven D; Zhang C

来源：Applied Physics Letters, 2010, 97(4): 043104.

DOI：10.1063/1.3469941

• energy gap
• graphene
• hydrogenation
• optical conductivity
• semiconductor materials
• tight-binding calculations

We demonstrate two unusual electronic properties of semihydrogenated graphene with variable sized A- or B-hydrogenated domains within the tight-binding formalism as follows: (i) a universal band gap scaling law which states that the band gap depends linearly upon the ratio of the number of A- to B-hydrogenated atoms, N-A/N-B, reaching zero gap at N-A=N-B, but independent of the domain size, and (ii) an insulating state with zero band gap at N-A=N-B, a rare phenomenon in nature. We confirm this gapless insulator state by the zero optical conductance at low frequencies.

• 出版日期2010-7-26