Novel lateral insulated gate bipolar transistor on SOI substrate for optimizing hot-carrier degradation

作者：Huang Tingting; Liu Siyang; Sun Weifeng^*; Zhang Chunwei

来源：Journal of Southeast University (english Edition), 2014, 30(1): 17-21.

DOI：10.3969/j.issn.1003-7985.2014.01.004

• Anode currents
• Hot carrier degradation
• Hot-carrier effects
• Lateral insulated gate bipolar transistors
• Process window
• Silicon-on-insulator substrates
• Silicon-on-insulators
• SOI substrates

A novel lateral insulated gate bipolar transistor on a silicon-on-insulator substrate (SOI-LIGBT) with a special low-doped P-well structure is proposed. The P-well structure is added to attach the P-body under the channel, so as to reduce the linear anode current degradation without additional process. The influence of the length and depth of the P-well on the hot-carrier (HC) reliability of the SOI-LIGBT is studied. With the increase in the length of the P-well, the perpendicular electric field peak and the impact ionization peak diminish, resulting in the reduction of the hot-carrier degradation. In addition, the impact ionization will be weakened with the increase in the depth of the P-well, which also makes the hot-carrier degradation decrease. Considering the effect of the low-doped P-well and the process windows, the length and depth of the P-well are both chosen as 2 μm.

• 出版日期2014
• 单位东南大学