Microstrip structures of ZnO nanoparticle aggregates of millimetric length formed by selected-area ion implantation and thermal oxidation

作者：Amekura H^*; Wang H S; Hishita S; Pan J; Kishimoto N; Buchal Ch; Mantl S

来源：Nanotechnology, 2009, 20(6): 065303.

DOI：10.1088/0957-4484/20/6/065303

Regularly arrayed microstrip regions of width similar to 1.4 mu m and length extending up to similar to 5 mm, consisting of ZnO nanoparticles (NPs) of diameter similar to 50 nm, were fabricated on silica substrates by a two-step process: i.e., selected-area ion implantation and thermal oxidation. The implantation of 60 keV Zn ions in periodic microstrip regions via a resist mask generated periodic grooves with large wings on the surface of silica glass, which can be ascribed to the radiation-induced plastic deformation of silica and sputtering loss. This is the lowest record of the electronic energy loss (S(e)) value to induce the radiation-induced plastic deformation of silica, while no or very low threshold energy has been predicted from a recent study. After thermal oxidation at 700 degrees C for 1 h, the groove structures with the wings disappeared, and periodic microstrips of ZnO nanoparticle aggregates up to 5 mm long appeared on the surface of the substrate. A clear free-exciton peak due to ZnO NPs is observed from these microstrip structures both in optical absorption and photoluminescence spectra.

• 出版日期2009-2-11
• 单位Forschungszentrum Juelich