摘要

We present nanoplasmonic Au/SiO2/Si metal-insulator-semiconductor distributed Bragg reflector resonators capable of broadband operation and with the potential for monolithic integration with complementary metal-oxide-semiconductor technology. With a compact device footprint as small as 1.5 mu m(2) and quality factors as high as 64.4 at lambda = 1.545 mu m, these resonators have the highest quality factor over device footprint figure of merit yet demonstrated for a silicon nanoplasmonic device. A higher quality factor is shown to be achievable by using smaller gaps in the Bragg reflectors.

  • 出版日期2013-7-29