科研之友
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摘要
A silicon-on-insulator (SOI) lateral double-diffused MOSFET (LDMOSFET) with a buried field plate (BFP-LDMOS) is proposed. Its characteristics are studied using 2-D simulations. The proposed structure features double buried field plates which are surrounded by buried oxide (BOX) and connected to the source and drain electrode, respectively. The drain buried field plate (DBFP) prevents a premature breakdown at the interface of the silicon/BOX and enhances the dielectric field. The source buried field plate (SBFP) introduces a new electric field peak and modulates the distribution of the horizontal electric field. In addition, the BFPs replace part of the BOX, which is useful to minimize self-heating effects (SHE). According to the simulation results, compared to a conventional SOI LDMOS (C-LDMOS), the breakdown voltage (BV) in the BFP-LDMOS increases from 128 V to 182 V. The specific on state resistance (R-on,R-sp), however, decreases from 20.46 m Omega cm(2) to 18.50 m Omega cm(2). Moreover, the maximum lattice temperature at 1 mW/mu m and V-gs = 10 V is reduced by 33.8 K compared to the C-LDMOS device.
