Nucleation of Si and Ge by rapid cooling using molecular-dynamics simulation

作者：Xiao Yanping^*; Motooka Teruaki; Teranishi Ryo; Munetoh Shinji

来源：Journal of Crystal Growth, 2013, 362: 103-105.

DOI：10.1016/j.jcrysgro.2011.11.018

• Nucleation
• Solidification
• Semiconducting germanium
• Semiconducting silicon

The recrystallization processes of supercooled Si and Ge melts were investigated using molecular-dynamics (MD) simulations. The incubation time T-i defined as the cooling time period to obtain 10% recrystallization of supercooled melts is found to be minimum when temperature is around 0.7T(m) (T-m: melting temperature for both of crystal Si and Ge). The MD results suggest that 0.7T(m) is an optimum annealing temperature to enhance the nucleation rate in the growth processes of Si and Ge films.

• 出版日期2013-1-1