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AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-mu m-Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V
AlGaN Channel HEMT With Extremely High Breakdown Voltage
AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser
AlGaN Metal-Semiconductor-Metal Photodetectors on Planar and Epitaxial Laterally Overgrown AlN/Sapphire Templates for the Ultraviolet C Spectral Region
AlGaN/AlN-GaN-SL HEMTs with Multiple 2DEG Channels
AlGaInAs quantum-well as a saturable absorber in a diode-pumped passively Q-switched solid-state laser
AlGaN/GaN biosensor - effect of device processing steps on the surface properties and biocompatibility
AlGaInAs quantum dot solar cells: tailoring quantum dots for intermediate band formation
AlGaN/GaN HEMT structures on ammono bulk GaN substrate
AlGaN/GaN recessed MIS-gate HFET with high-threshold-voltage normally-off operation for power electronics applications
AlGaN/GaN Schottky-ohmic combined anode field effect diode with fluoride-based plasma treatment
AlGaN/GaN HEMTs with thin InGaN cap layer for normally off operation
AlGaN based tunable hyperspectral detector
AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas
AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited TiO2 as Gate Dielectric
AlGaN/GaN heterostructure field-effect transistors with multi-MgxNy/GaN buffer and Photo-CVD SiO2 gate dielectric
AlGaN/GaN two-dimensional electron gas Schottky barrier photodiodes with multiple MgxNy/GaN layers
AlGaN/GaN Schottky Barrier UV Photodetectors With a GaN Sandwich Layer
AlGaN/GaN High Electron Mobility Transistor Based Sensors for Environmental and Bio-Applications
AlGaN/GaN Heterostructure Field-Effect Transistor with Semi-Insulating Mg-Doped GaN Cap Layer
AlGaAs microdisk cavities for second-harmonic generation
AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped TiO2 as a Gate Dielectric
AlGaN/GaN HEMTs with very thin buffer on Si (111) for nanosystems applications
AlGaN composition dependence of the band offsets for epitaxial Gd2O3/AlxGa1-xN (0 <= x <= 0.67) heterostructures
AlGaN membrane grating reflector
AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates
AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers
AlGaAs guided-wave second-harmonic generation at 2.23 mu m from a quantum cascade laser
AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications
AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance
AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free Technology
AlGaN surfaces etched by CF4 plasma with and without the assistance of near-ultraviolet irradiation
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate
AlGaN/GaN MOS-HEMT Device Fabricated Using a High Quality PECVD Passivation Process
AlGaN HEMTs on patterned resistive/conductive SiC templates
AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm
AlGaN/GaN MOS-HEMTs with Corona-Discharge Plasma Treatment
AlGaN solar-blind avalanche photodiodes with AlInN/AlGaN distributed Bragg reflectors
AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm
AlGaAs/GaAs/AlGaAs渐变异质结光致发光仿真研究
AlGaAs/GaAs量子阱探测器的吸收光谱研究
AlGaAs/InGaAs PHEMT栅电流参数退化模型研究
AlGaN/GaN-on-Si Power FET with Mo/Au Gate
AlGaInAs多量子阱材料增益偏振相关性分析
AlGaN/GaN高电子迁移率晶体管漏电流退化机理研究
AlGaInAs/InP应变补偿多量子阱激光器
AlGaInAs/InP多量子阱激光器的量子阱数的优化
AlGaN缓冲层结构对Si基GaN材料性能的影响
AlGaAs waveguide microresonators for efficient generation of quadratic frequency combs
AlGaSb-Based Solar Cells Grown on GaAs: Structural Investigation and Device Performance
AlGaN nanostructures with extremely high quantum yield at 300 K
AlGaN/AlN integrated photonics platform for the ultraviolet and visible spectral range
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
AlGaN/GaN HEMTs on Silicon With Hybrid Schottky-Ohmic Drain for RF Applications
AlGaAs Fe-55 X-ray radioisotope microbattery
AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors with high on/off current ratio of over 5 x 10(10) achieved by ozone pretreatment and using ozone oxidant for Al2O3 gate insulator
AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy (vol 98, 081110, 2011)
AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy
AlGaAs capping effect on InAs quantum dots self-assembled on GaAs
AlGaN-on-Si-Based 10-mu m Pixel-to-Pixel Pitch Hybrid Imagers for the EUV Range
AlGaN based III-nitride tunnel barrier hyperspectral detector: Effect of internal polarization
AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress
AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers
AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes
AlGaN/GaN Schottky Barrier Diode on Si Substrate Employing NiOx/Ni/Au Contact
AlGaN/GaN-based HEMTs for electrical stimulation of neuronal cell cultures
AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer
AlGaInP-Based LEDs with a p(+)-GaP Window Layer and a Thermally Annealed ITO Contact
AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrate
AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes
AlGaInAs multiple-quantum-well 1.2-mu m semiconductor laser in-well pumped by an Yb-doped pulsed fiber amplifier
AlGaN-Based 355 nm UV Light-Emitting Diodes with High Power Efficiency
AlGaInAs/InP Monolithically Integrated DFB Laser Array
AlGaN nanowire laser diode emits at 239 nm
AlGaAs/GaAs Triple Quantum Well Photodetector at 5 mu m Wavelength-A Simulation Study
AlGaN Light-Emitting Diodes on AlN Substrates Emitting at 230nm
AlGaInP Red LEDs with Hollow Hemispherical Polystyrene Arrays
AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding
AlGaAs-based vertical-external-cavity surface-emitting laser exceeding 4 W of direct emission power in the 740-790 nm spectral range
AlGaN/GaN HEMT凹栅槽结构器件的频率特性