A 50-60 V Class Ultralow Specific on-Resistance Trench Power MOSFET

作者：Hu Sheng Dong^*; Zhang Ling; Chen Wen Suo; Luo Jun; Tan Kai Zhou; Gan Ping; Zhu Zhi; Wu Xing He

来源：Chinese Physics Letters, 2012, 29(12): 128502.

DOI：10.1088/0256-307X/29/12/128502

A 50-60 V class ultralow specific on-resistance (R-on,R-sp) trench power MOSFET is proposed. The structure is characterized by an n(+)-layer which is buried on the top surface of the p-substrate and connected to the drain n(+)-region. The low-resistance n(+)-layer shortens the motion-path in high-resistance n(-) drift region for the carriers, and therefore, reduces the R-on,R-sp in the on-state. Electrical characteristics for the proposed power MOSFET are analyzed and discussed. The 50-60 V class breakdown voltages (V-B) with R-on,R-sp less than 0.35 m Omega.cm(2) are obtained. Compared with several power MOSFETs, the proposed power MOSFET has a significantly optimized dependence of R-on,R-sp on V-B.

• 出版日期2012-12
• 单位重庆大学