A novel voltage-type sense amplifier for low-power nonvolatile memories

作者：Li Ming^*; Kang JinFeng; Wang YangYuan

来源：Science China Information Sciences, 2010, 53(8): 1676-1681.

DOI：10.1007/s11432-010-4015-8

• sense amplifier
• nonvolatile memory
• transponder
• low-power

Based on the requirements of the nonvolatile memories embedded in ultra low-power RFID transponders, a novel voltage-type sense amplifier is designed to achieve both the reduced reading power and the improved reliability. Compared to the conventional voltage-type sense amplifier, the additional capacitor and current limiter are introduced in the novel voltage-type sense amplifier to reduce the reading power and to improve the reading reliability. The simulations show that the reading power and reliability of our voltage-type sense amplifier are superior to the previously reported voltage-type sense amplifier without speed loss but with only a little increased area. A testing chip has been fabricated based on 0.18 mu m EEPROM technology to verify the design. The novel voltage-type sense amplifier can be implemented to the low-power nonvolatile memory embedded in RFID transponder.

• 出版日期2010-8
• 单位北京大学