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摘要
A continuous current model of fully-depleted symmetric double-gate (DG) MOSFETs which can reflect a wide range (from intrinsic to heavy doping) of the body doping concentrations was developed based on an approximated analytic potential solution of Poisson's equation. The model was compared with the results of device simulation, and showed very good agreement in all operation regions such as subthreshold, turn-on, linear and saturation.
- 出版日期2010-5
- 单位沈阳工业大学
