A Simple Test Structure for Directly Extracting Substrate Network Components in Deep n-Well RF-CMOS Modeling

作者：Liu Jun^*; Sun Lingling; Lou Liheng; Wang Huang; McCorkell Charles

来源：IEEE Electron Device Letters, 2009, 30(11): 1200-1202.

DOI：10.1109/LED.2009.2031306

• Deep n-well (DNW)
• parameter extraction
• radio-frequency (RF) MOSFET
• substrate network

A simple test structure is proposed for accurately extracting the substrate network parameters of a radio-frequency MOSFET with deep n-well implantation from two-port measurements. The test structure with the source, drain, and gate terminals all connected together is used as port one, while the bulk terminal as port two, making the substrate network distinctly accessible in measurements. A methodology is developed to directly extract the parameters for the substrate network from the measured data. The method is further verified by the excellent match between the measured and simulated output admittances on the extracted parameters for a 16-finger nMOSFET of common-source configuration operated in different bias conditions.

• 出版日期2009-11
• 单位杭州电子科技大学