Analytical Modeling and Simulation of Dual-Material Surrounding-Gate Metal-Oxide-Semiconductor Field Effect Transistors with Single-Halo Doping

作者：Li Zun Chao^*; Zhang Rui Zhi; Jiang Yao Lin

来源：Japanese Journal of Applied Physics, 2009, 48(3): 034505.

DOI：10.1143/JJAP.48.034505

We present a modified surrounding-gate metal-oxide-semiconductor field effect transistor (MOSFET), in which the gate consists of two metals with different work functions, and single-halo doping is added to the channel near the source end. The performance of the modified structure was studied by developing physics-based analytical models for the surface potential, electric field, and threshold voltage. It is shown that the novel MOSFET could significantly reduce threshold voltage roll-off and drain-induced barrier lowering, and simultaneously improve carrier transport efficiency by carefully configuring the halo doping and work functions of the dual-material; gate. The results predicted using the models are compared with those obtained with the three-dimensional simulator Davinci to verify the accuracy of the proposed analytical models.

• 出版日期2009-3
• 单位西安交通大学