A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs

作者：Ma Fei^*; Liu Hong Xia; Fan Ji Bin; Wang Shu Long

来源：Chinese Physics B, 2012, 21(10): 107306.

DOI：10.1088/1674-1056/21/10/107306

• metal-gate
• high-k
• work function
• flat-band voltage
• threshold voltage
• metal-oxide-semiconductor field-effect transistor

In this paper the influences of the metal-gate and high-k/SiO2/Si stacked structure on the metal-oxide-semiconductor field-effect transistor (MOSFET) are investigated. The flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function fluctuation. The two-dimensional Poisson';s equation of potential distribution is presented. A threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs is developed by solving these Poisson';s equations using the boundary conditions. The model is verified by a two-dimensional device simulator, which provides the basic design guidance for metal-gate/high-k/SiO2/Si stacked MOSFETs.

• 出版日期2012-10
• 单位西安电子科技大学